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Maskless selective area growth of InP on sub-μm V-groove patterned Si(001)

Author
SCHNABEL, R. F1 ; KROST, A1 ; GRUNDMANN, M1 ; BIMBERG, D1 ; CERVA, H
[1] Tech. Univ. Berlin, Inst. Festkörperphysik, 10623 Berlin, Germany
Conference title
Biennial Workshop on organometallic vapor phase epitaxy
Conference name
Biennial Workshop on organometallic vapor phase epitaxy (7 ; Ft. Myers FL 1995-04-02)
Author (monograph)
GASKILL, D. K (Editor); HERSEE, S. D (Editor)
Air Products and Chemicals (Funder/Sponsor)
Aixtron (Funder/Sponsor)
Akzo Nobel Chemicals (Funder/Sponsor)
EMCORE (Funder/Sponsor)
Epitaxial Products Internationals, International (Funder/Sponsor)
MCP Wafer Technology (Funder/Sponsor)
MKS Instruments (Funder/Sponsor)
Morton International, International (Funder/Sponsor)
NIMTEC/Japan Energy, Japan (Funder/Sponsor)
Rockwell International, International (Funder/Sponsor)
Source

Journal of electronic materials. 1995, Vol 24, Num 11, pp 1625-1629 ; ref : 12 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Aire sélective Composé binaire Couche mince Croissance cristalline en phase vapeur Etude expérimentale Formation motif Indium phosphure Matériau semiconducteur Méthode MOCVD Prétraitement Rainure SEM Substrat In P InP Substrat Si Composé minéral
Keyword (en)
Selective area Binary compounds Thin films Crystal growth from vapors Experimental study Patterning Indium phosphides Semiconductor materials MOCVD Pretreatment Groove SEM Substrates Inorganic compounds
Keyword (es)
Formacíon motivo Pretratamiento Ranura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2903890

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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