Doping against the Native Propensity of MoS₂: Degenerate Hole Doping by Cation Substitution

Author

JOONKI SUH¹ ; PARK, Tae-Eon² ; SINCLAIR, Robert⁴ ; JOONYEON CHANG² ; TONGAY, Sefaattin¹ ; JUNQIAO WU^{1 6} ; LIN, Der-Yuh³ ; DEYI FU¹ ; JOONSUK PARK⁴ ; HEE JOON JUNG⁵ ; YABIN CHEN¹ ; CHANGHYUN KO¹ ; CHAUN JANG² ; YINGHUI SUN⁶
[1] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
[2] Spin Convergence Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea, Republic of
[3] Department of Electronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan, Province of China
[4] Department of Materials Sciences and Engineering, Stanford University, Stanford, California 94305, United States
[5] Energy and Environmental Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
[6] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Source

Nano letters (Print). 2014, Vol 14, Num 12, pp 6976-6982, 7 p ; ref : 50 ref

ISSN

1530-6984

Scientific domain

General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics

Publisher

American Chemical Society, Washington, DC

Publication country

United States

Document type

Article

Language

English

Keyword (fr)

Adsorption Bande conduction Bande valence Densité porteur charge Dispositif optoélectronique Dopage Electrode commande Electronique spin Homojonction Jonction p n Lacune Liaison covalente Microélectronique Miscibilité Molybdène Métal transition Niobium Semiconducteur type p Spin polarisé Structure électronique Substitution ion 6843 7322 8570E 8575 MoS2

Keyword (en)

Adsorption Conduction band Valence band Charge carrier density Optoelectronic device Doping Gates Spintronics Homojunction p n junction Vacancy Covalent bond Microelectronics Miscibility Molybdenum Transition metal Niobium p type semiconductor Polarized spin Electronic structure Ion substitution

Keyword (es)

Adsorción Banda conducción Banda valencia Concentración portador carga Dispositivo optoelectrónico Doping Electrónica de espin Homounión Unión p n Cavidad Enlace covalente Microelectrónica Miscibilidad Molibdeno Metal transición Niobio Semiconductor tipo p Spin polarizado Estructura electrónica Sustitución ión

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C22 Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals

Pascal

001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F12 Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics

Discipline

Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

29062630

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS