An investigation of the diffusion and electomigration limited growth mechanism of InP
- Author
- QHALID FAREED, R. S; DHANASEKARAN, R
Anna univ., crytal growth cent., Madras 600 025, India - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 152-158 ; ref : 23 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Croissance cristalline Diffusion(transport) Etat fondu Indium phosphure Interface Simulation ordinateur Taux croissance InP
- Keyword (en)
- Binary compounds Crystal growth Diffusion Melts Indium phosphides Interfaces Computerized simulation Growth rate
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2912392
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-5107(95)01243-5 
https://dx.doi.org/10.1016/0921-5107(95)01243-5
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