Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)
- Author
- ZETTLER, J.-T1 ; RUMBERG, J1 ; PLOSKA, K1 ; STAHRENBERG, K1 ; PRISTOVSEK, M1 ; RICHTER, W1 ; WASSERMEIER, M; SCHÜTZENDÜBE, P; BEHREND, J; DÄWERITZ, L
[1] Tech. Univ. Berlin, Inst. Festkörperphysik, 10623 Berlin, Germany - Conference title
- US-European workshop on optical characterization of electronic materials
- Conference name
- US-European workshop on optical characterization of electronic materials (Halle/Saale 1994-10-05)
- Source
Physica status solidi. A. Applied research. 1995, Vol 152, Num 1, pp 35-47 ; ref : 34 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Anisotropie Composé organométallique Epitaxie jet moléculaire Etude expérimentale Gallium arséniure In situ Méthode CVD Reconstruction surface Semiconducteur III-V Spectre réflexion Structure domaine Structure surface As Ga GaAs Composé minéral
- Keyword (en)
- Anisotropy Organometallic compounds Molecular beam epitaxy Experimental study Gallium arsenides In situ CVD Surface reconstruction III-V semiconductors Reflection spectrum Domain structure Surface structure Inorganic compounds
- Keyword (es)
- In situ Espectro reflexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2931689
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211520104 
https://dx.doi.org/10.1002/pssa.2211520104
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