The controlled growth of high-quality mercury cadmium telluride
- Author
- VARAVIN, V. S; DVORETSKY, S. A; LIBERMAN, V. I; MIKHAILOV, N. N; SIDOROV, YU. G
Inst. semiconductor physics, Novosibirsk 630090, Russian Federation - Conference title
- Workshop on molecular beam epitaxy-growth physics and technology (MBE-GPT'94)
- Conference name
- Workshop on molecular beam epitaxy-growth physics and technology (MBE-GPT'94) (MBE-GPT'94) (Warsaw 1994-12-12)
- Author (monograph)
- HERMAN, Marian A (Editor)1
Polish Vacuum Society, Poland (Funder/Sponsor)
[1] Inst. vacuum technology, 00-241 Warsaw, Poland - Source
Thin solid films. 1995, Vol 267, Num 1-2, pp 121-125 ; ref : 13 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- Russian
- Keyword (fr)
- Cadmium tellurure Composé ternaire Croissance cristalline Défaut Ellipsométrie Epitaxie jet moléculaire Faisceau moléculaire Hétérojonction Interface Mercure tellurure Surface
- Keyword (en)
- Cadmium tellurides Ternary compounds Crystal growth Defects Ellipsometry Molecular beam epitaxy Molecular beams Heterojunctions Interfaces Mercury tellurides Surfaces
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2937864
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0040-6090(95)06661-6 
https://dx.doi.org/10.1016/0040-6090(95)06661-6
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