Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source
- Author
- HORINAKA, H1 ; ONO, D1 ; KATO, T; WENDONG ZHEN1 ; WADA, K1 ; CHO, Y; HAYASHI, Y; NAKANISHI, T; OKUMI, S; AOYAGI, H; SAKA, T
[1] Univ. Osaka Prefecture, coll. eng., Sakai 593, Japan - Source
Japanese journal of applied physics. 1995, Vol 34, Num 12A, pp 6444-6447 ; 1 ; ref : 11 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Déformation mécanique Electron polarisé Electron Etude expérimentale Gallium arséniure Photocathode Photoluminescence Relaxation spin Source électron
- Keyword (en)
- Strains Polarized electron Electrons Experimental study Gallium arsenides Photocathodes Photoluminescence Spin relaxation Electron sources
- Keyword (es)
- Electrón polarizado Relajación spin
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B20 Nuclear physics / 001B20I Experimental methods and instrumentation for elementary-particle and nuclear physics / 001B20I25 Particle sources and targets / 001B20I25B Electron sources
- Discipline
- Nuclear physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2945793
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1143/JJAP.34.6444 
https://dx.doi.org/10.1143/JJAP.34.6444
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.34.6444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"34\";s:8:\"\u0000*\u0000issue\";s:3:\"12A\";s:8:\"\u0000*\u0000spage\";s:4:\"6444\";s:8:\"\u0000*\u0000epage\";s:4:\"6447\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"HORINAKA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:6:\"ONO, D\";i:1;s:7:\"KATO, T\";i:2;s:12:\"WENDONG ZHEN\";i:3;s:7:\"WADA, K\";i:4;s:6:\"CHO, Y\";i:5;s:10:\"HAYASHI, Y\";i:6;s:12:\"NAKANISHI, T\";i:7;s:8:\"OKUMI, S\";i:8;s:9:\"AOYAGI, H\";i:9;s:7:\"SAKA, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.34.6444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"34\";s:8:\"\u0000*\u0000issue\";s:3:\"12A\";s:8:\"\u0000*\u0000spage\";s:4:\"6444\";s:8:\"\u0000*\u0000epage\";s:4:\"6447\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"HORINAKA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:6:\"ONO, D\";i:1;s:7:\"KATO, T\";i:2;s:12:\"WENDONG ZHEN\";i:3;s:7:\"WADA, K\";i:4;s:6:\"CHO, Y\";i:5;s:10:\"HAYASHI, Y\";i:6;s:12:\"NAKANISHI, T\";i:7;s:8:\"OKUMI, S\";i:8;s:9:\"AOYAGI, H\";i:9;s:7:\"SAKA, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.34.6444\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.34.6444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"34\";s:8:\"\u0000*\u0000issue\";s:3:\"12A\";s:8:\"\u0000*\u0000spage\";s:4:\"6444\";s:8:\"\u0000*\u0000epage\";s:4:\"6447\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"HORINAKA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:6:\"ONO, D\";i:1;s:7:\"KATO, T\";i:2;s:12:\"WENDONG ZHEN\";i:3;s:7:\"WADA, K\";i:4;s:6:\"CHO, Y\";i:5;s:10:\"HAYASHI, Y\";i:6;s:12:\"NAKANISHI, T\";i:7;s:8:\"OKUMI, S\";i:8;s:9:\"AOYAGI, H\";i:9;s:7:\"SAKA, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.34.6444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"34\";s:8:\"\u0000*\u0000issue\";s:3:\"12A\";s:8:\"\u0000*\u0000spage\";s:4:\"6444\";s:8:\"\u0000*\u0000epage\";s:4:\"6447\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"HORINAKA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:6:\"ONO, D\";i:1;s:7:\"KATO, T\";i:2;s:12:\"WENDONG ZHEN\";i:3;s:7:\"WADA, K\";i:4;s:6:\"CHO, Y\";i:5;s:10:\"HAYASHI, Y\";i:6;s:12:\"NAKANISHI, T\";i:7;s:8:\"OKUMI, S\";i:8;s:9:\"AOYAGI, H\";i:9;s:7:\"SAKA, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.34.6444\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"34\";s:8:\"\u0000*\u0000issue\";s:3:\"12A\";s:8:\"\u0000*\u0000spage\";s:4:\"6444\";s:8:\"\u0000*\u0000epage\";s:4:\"6447\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"HORINAKA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:6:\"ONO, D\";i:1;s:7:\"KATO, T\";i:2;s:12:\"WENDONG ZHEN\";i:3;s:7:\"WADA, K\";i:4;s:6:\"CHO, Y\";i:5;s:10:\"HAYASHI, Y\";i:6;s:12:\"NAKANISHI, T\";i:7;s:8:\"OKUMI, S\";i:8;s:9:\"AOYAGI, H\";i:9;s:7:\"SAKA, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Spin relaxation of electrons in strained-GaAs-layer photocathode of polarized electron source\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
