Preparation of low density free-standing shape of SiC by pressure-pulsed chemical vapour infiltration
- Author
- SUGIYAMA, K; NORIZUKI, K
Aichi inst. technology, dep. applied chemistry, Yakusacho, Toyoda 470-03, Japan - Source
Journal of materials science letters. 1995, Vol 14, Num 23, pp 1720-1722 ; ref : 7 ref
- Publisher
- Kluwer Academic Publishers, Dordrecht
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Céramique sans oxyde Dépôt chimique phase vapeur Etude expérimentale Fabrication Infiltration Matériau poreux Propriété mécanique Propriété physique Pulsation Résistance flexion Silicium Carbure Sous pression Infiltration chimique phase vapeur SiC
- Keyword (en)
- Non oxide ceramics Chemical vapor deposition Experimental study Manufacturing Infiltration Porous material Mechanical properties Physical properties Pulse Bending strength Silicon Carbides Under pressure Chemical vapor infiltration
- Keyword (es)
- Cerámica sin óxido Depósito químico fase vapor Estudio experimental Fabricación Infiltración Material poroso Propiedad mecánica Propiedad física Pulsación Resistencia flexión Silicio Carburo Bajo presión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D08 Chemical industry and chemicals / 001D08B Building materials. Ceramics. Glasses / 001D08B04 Ceramic industries / 001D08B04C Technical ceramics / 001D08B04C6 Miscellaneous
- Discipline
- Chemical and parachemical industries
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2953098
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF00422686 
https://dx.doi.org/10.1007/BF00422686
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