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The chemical vapor deposition of copper and copper alloys

Author
DOPPELT, P; BAUM, T. H
IBM Almaden res. cent., San Jose CA 95120-6099, United States
Conference title
International conference on metallurgical coatings and thin films ICMCTF95
Conference name
International conference on metallurgical coatings and thin films ICMCTF95 (22 ; San Diego CA 1995-04-24)
Author (monograph)
JEHN, Hermann A (Editor)1 ; MATTHEWS, Allan (Editor); MCGUIRE, Gary E (Editor); PETROV, Ivan (Editor)
American Vacuum Society ; vacuum metallurgy and thin films division, New York NY, United States (Funder/Sponsor)
[1] Forschungsinst. Edelmetalle Metallcheme, 73525 Schwaebisch Gmünd, United States
Source

Thin solid films. 1995, Vol 270, Num 1-2, pp 480-482 ; ref : 14 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Keyword (fr)
Alliage base cuivre Base Lewis Circuit LSI Composé organométallique Couche mince Cuivre complexe Cuivre Etain Etude expérimentale Fabrication microélectronique Métallisation Méthode CVD
Keyword (en)
Copper base alloys Lewis bases LSI circuit Organometallic compounds Thin films Copper complexes Copper Tin Experimental study Microelectronic fabrication Metallization CVD
Keyword (es)
Circuito LSI Fabricación microeléctrica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2958146

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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