Modulation characteristics of AlAs/GaAs double barrier quantum well resonant tunneling structure at microwave frequencies
- Author
- CHU, H. Y; PARK, P. W; LEE, E. H
Electronics telecommunications res. inst., res. dep., Yusong, Taejon 305-600, Korea, Republic of - Conference title
- International conference on low dimensional structures and devices
- Conference name
- International conference on low dimensional structures and devices (1 ; Singapore 1995-05-08)
- Author (monograph)
- HENINI, Mohamed (Editor)1 ; SZWEDA, Roy (Editor)
[1] Univ. Nottingham ; dep. physics, Nottingham NG7 2RD, United Kingdom - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 446-448 ; ref : 9 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium arséniure Caractéristique courant tension Composé binaire Diode tunnel Dispositif couche mince Dispositif semiconducteur Effet tunnel résonnant Etude expérimentale Gallium arséniure Irradiation laser Oscillateur hyperfréquence Porteur charge Puits quantique multiple Puits quantique Semiconducteur III-V Semiconducteur
- Keyword (en)
- Aluminium arsenides IV characteristic Binary compounds Tunnel diodes Thin film device Semiconductor devices Resonant tunnel effect Experimental study Gallium arsenides Laser irradiation Microwave oscillator Charge carriers Multiple quantum well Quantum wells III-V semiconductors Semiconductor materials
- Keyword (es)
- Dispositivo capa delgada Efecto túnel resonante Irradiación láser Oscilador hiperfrequencia Pozo cuántico múltiple Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2960679
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-5107(95)01407-1 
https://dx.doi.org/10.1016/0921-5107(95)01407-1
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