The control and modification of metal-semiconductor interfaces using multi quantum barriers
- Author
- KESTLE, A1 ; WILKS, S. P; WESTWOOD, D. I1 ; KE, M1 ; ELLIOTT, M1 ; WILLIAMS, R. H
[1] Univ. Wales, coll. Cardiff, dep. physics astronomy, Cardiff CF2 3YB, United Kingdom - Conference title
- International conference on low dimensional structures and devices
- Conference name
- International conference on low dimensional structures and devices (1 ; Singapore 1995-05-08)
- Author (monograph)
- HENINI, Mohamed (Editor)1 ; SZWEDA, Roy (Editor)
[1] Univ. Nottingham ; dep. physics, Nottingham NG7 2RD, United Kingdom - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 145-148 ; ref : 4 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium arséniure Barrière Schottky Caractéristique courant tension Composé III-V Composé ternaire Contact Couche mince Epitaxie jet moléculaire Etude comparative Gallium arséniure Hauteur barrière Interface Métal Or Processus multiquantique Semiconducteur III-V Semiconducteur Superréseau
- Keyword (en)
- Aluminium arsenides Schottky barrier IV characteristic III-V compound Ternary compounds Contact Thin films Molecular beam epitaxy Comparative study Gallium arsenides Barrier height Interfaces Metals Gold Multiquantum process III-V semiconductors Semiconductor materials Superlattices
- Keyword (es)
- Barrera Schottky Compuesto III-V Contacto Estudio comparativo Proceso multicuántico Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2960872
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/0921-5107(95)01360-1 
https://dx.doi.org/10.1016/0921-5107(95)01360-1
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0921-5107(95)01360-1\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"145\";s:8:\"\u0000*\u0000epage\";s:3:\"148\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KESTLE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"WILKS, S. P\";i:1;s:14:\"WESTWOOD, D. I\";i:2;s:5:\"KE, M\";i:3;s:10:\"ELLIOTT, M\";i:4;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"International conference on low dimensional structures and devices\";s:8:\"\u0000*\u0000title\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0921-5107(95)01360-1\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"145\";s:8:\"\u0000*\u0000epage\";s:3:\"148\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KESTLE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"WILKS, S. P\";i:1;s:14:\"WESTWOOD, D. I\";i:2;s:5:\"KE, M\";i:3;s:10:\"ELLIOTT, M\";i:4;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"International conference on low dimensional structures and devices\";s:8:\"\u0000*\u0000title\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0921-5107(95)01360-1\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0921-5107(95)01360-1\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"145\";s:8:\"\u0000*\u0000epage\";s:3:\"148\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KESTLE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"WILKS, S. P\";i:1;s:14:\"WESTWOOD, D. I\";i:2;s:5:\"KE, M\";i:3;s:10:\"ELLIOTT, M\";i:4;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"International conference on low dimensional structures and devices\";s:8:\"\u0000*\u0000title\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0921-5107(95)01360-1\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"145\";s:8:\"\u0000*\u0000epage\";s:3:\"148\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KESTLE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"WILKS, S. P\";i:1;s:14:\"WESTWOOD, D. I\";i:2;s:5:\"KE, M\";i:3;s:10:\"ELLIOTT, M\";i:4;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"International conference on low dimensional structures and devices\";s:8:\"\u0000*\u0000title\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0921-5107(95)01360-1\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:9:\"\u0000*\u0000jtitle\";s:81:\"Materials science & engineering. B, Solid-state materials for advanced technology\";s:9:\"\u0000*\u0000stitle\";s:52:\"Mater. sci. eng., B, Solid-state mater. adv. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:3:\"1-3\";s:8:\"\u0000*\u0000spage\";s:3:\"145\";s:8:\"\u0000*\u0000epage\";s:3:\"148\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0921-5107\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KESTLE\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"WILKS, S. P\";i:1;s:14:\"WESTWOOD, D. I\";i:2;s:5:\"KE, M\";i:3;s:10:\"ELLIOTT, M\";i:4;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"International conference on low dimensional structures and devices\";s:8:\"\u0000*\u0000title\";s:91:\"The control and modification of metal-semiconductor interfaces using multi quantum barriers\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
