Molecular beam epitaxial grown Si1-xCx layers on Si(001) as a substrate for MWCVD of diamond
- Author
- GUTHEIT, T1 ; HEINAU, M1 ; FÜSSER, H.-J1 ; WILD, C; KOIDL, P; ABSTREITER, G
[1] Daimler-Benz A.G., res. cent. Ulm, 89081 Ulm, Germany - Conference title
- Silicon molecular beam epitaxy 1995
- Conference name
- 1995 E-MRS spring conference. Symposium L (Strasbourg 1995-05-22) = International symposium on silicon molecular beam epitaxy (6 ; Strasbourg 1995-05-22)
- Author (monograph)
- KASPER, E (Editor)1 ; PARKER, E. H. C (Editor)
European Materials Research Society, Europe (Funder/Sponsor)
[1] Univ. Stuttgart ; Inst. Halbleitertech., 70174 Stuttgart, Germany - Source
Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 426-430 ; ref : 10 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Alliage binaire Carbone alliage Composition chimique Couche tampon Croissance cristalline en phase vapeur Croissance pseudomorphique Diamant Epitaxie jet moléculaire Etude expérimentale Hyperfréquence Matériau semiconducteur Morphologie Méthode CVD Silicium alliage Solution solide Texture C Si C Si1-xCx Non métal
- Keyword (en)
- Binary alloys Carbon alloys Chemical composition Buffer layer Crystal growth from vapors Pseudomorphic growth Diamonds Molecular beam epitaxy Experimental study Microwave radiation Semiconductor materials Morphology CVD Silicon alloys Solid solutions Texture Nonmetals
- Keyword (es)
- Capa tampón Crecimiento pseudomórfico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2964150
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)00360-6 
https://dx.doi.org/10.1016/0022-0248(95)00360-6
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