InxGa1-xAs/InP quantum well structures grown on [111]B InP
- Author
- HOPKINSON, M; DAVID, J. P. R; KHOO, E. A; PABLA, A. S; WOODHEAD, J; REES, G. J
Univ. Sheffield, EPSRC cent. facility III-V semiconductors, dep. electronic electrical eng., Sheffield S1 3JD, United Kingdom - Conference title
- Novel index semiconductor surfaces
- Conference name
- International workshop on growth, characterization and exploitation of epitaxial III-V compound semiconductor on novel index surfaces (1 ; Trento 1994-12-04)
- Author (monograph)
- HENINI, Mohamed (Editor)1
[1] Univ. Nottingham ; physics dep., Nottingham NG7 2RD, United Kingdom - Source
Microelectronics journal. 1995, Vol 26, Num 8, pp 805-810 ; ref : 17 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé III-V Composé binaire Composé ternaire Diode couche intrinsèque Etude expérimentale Fabrication microélectronique Gallium Arséniure Indium Arséniure Indium Phosphure Photoluminescence Puits quantique contraint Puits quantique multiple As Ga In In P InP InxGa1-xAs
- Keyword (en)
- III-V compound Binary compound Ternary compound p i n diode Experimental study Microelectronic fabrication Gallium Arsenides Indium Arsenides Indium Phosphides Photoluminescence Strained quantum well Multiple quantum well
- Keyword (es)
- Compuesto III-V Compuesto binario Compuesto ternario Diodo capa intrínseca Estudio experimental Fabricación microeléctrica Galio Arseniuro Indio Arseniuro Indio Fosfuro Fotoluminiscencia Pozo cuántico forzado Pozo cuántico múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2964410
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0026-2692(95)00040-2 
https://dx.doi.org/10.1016/0026-2692(95)00040-2
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