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Low energy ion bombardment effects in gold/aluminium nitride/silicon junctions

Author
STACY, T; LIAW, B. Y; KHAN, A. H
Univ. Missouri, dep. electrical computer eng., Columbia MO 65211, United States
Conference title
Ion beam and laser processing of materials. Conference
Conference name
Ion beam and laser processing of materials. Conference
Author (monograph)
SINGH, Rajiv (Editor)1 ; HOLLAND, Wayne (Editor)
Minerals, Metals and Materials Society ; Thin films and Interfaces Committee, United States (Funder/Sponsor)
[1] Univ. Florida, United States
Source

Journal of electronic materials. 1996, Vol 25, Num 1, pp 113-118 ; ref : 12 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Aluminium nitrure Barrière Schottky Caractéristique courant tension Effet physique rayonnement Etude expérimentale Faisceau ion Hétérojonction Or Rectification Silicium Traitement surface Al N AlN Au Si
Keyword (en)
Aluminium nitrides Schottky barrier IV characteristic Physical radiation effects Experimental study Ion beams Heterojunctions Gold Rectification Silicon Surface treatments
Keyword (es)
Barrera Schottky Rectificación
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions

Pacs
7330 Surface double layers, Schottky barriers, and work functions

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2970602

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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