Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2976307

The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization

Author
CHUL SOON KWON1 ; YONG TAE KIM; SUK-KI MIN; IN-HOON CHOI
[1] Samsung Electronics, micro process development, Buchun, Kyunggi-Do 421-130, Korea, Republic of
Conference title
MicroProcess
Conference name
MPC'95. International conference (8 ; Sendai 1995-07-17)
Author (monograph)
AOYAGI, Katsunobu (Editor); ATODA, Nobufumi (Editor)1 ; NAKAMURA, Moritaka (Editor); OKAZAKI, Shinji (Editor); SUZUKI, Katsumi (Editor); TAKIGAWA, Tadahiro (Editor); YAMAOKA, Tsuguo (Editor); HARADA, Katsuhiro (Editor); HORIIKE, Yasuhiro (Editor); ITOH, Junji (Editor); KANAYAMA, Toshihiko (Editor); MATSUI, Shinji (Editor); MIYOSHI, Motosuke (Editor); MORIMOTO, Hiroaki (Editor); MUROTA, Junichi (Editor)
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
American Vacuum Society, New York NY, United States (Funder/Sponsor)
IEEE ; Electron Device Group, United States (Funder/Sponsor)
[1] SORTEC Corp., Tsukuba-shi, Ibaraki 300-42, Japan
Source

Japanese journal of applied physics. 1995, Vol 34, Num 12B, pp 6857-6860 ; 1 ; ref : 8 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Conference Paper
Language
English
Keyword (fr)
Amorphisation Azote ion Barrière diffusion Couche mince Diffusion(transport) Effet physique rayonnement Etude expérimentale Fabrication microélectronique Implantation ion Métallisation Stabilité thermique Tungstène W:N Métal transition
Keyword (en)
Amorphization Nitrogen ions Diffusion barriers Thin films Diffusion Physical radiation effects Experimental study Microelectronic fabrication Ion implantation Metallization Thermal stability Tungsten Transition elements
Keyword (es)
Fabricación microeléctrica Estabilidad térmica
Keyword (de)
Thermische Stabilitaet
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy

Pacs
6855L Defects and impurities: doping, implantation, distribution, concentration, etc

Pacs
8540H Lithography, masks and pattern transfer

Discipline
Electronics Metals. Metallurgy Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2976307

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web