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A study of composite Bi2O3, In2O3 and RuO2 planar thick film piezoresistive gauges

Author
COLLINS, D. G; ARSHAK, K. I
Univ. Limerick, electronic computer eng., microelectronics semiconductor res. unit, Limerick, Ireland
Source

Microelectronics journal. 1996, Vol 27, Num 1, pp 59-65 ; ref : 9 ref

ISSN
0959-8324
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Bismuth oxyde Composition chimique Composé n éléments Configuration plane Etude expérimentale Indium oxyde Jauge contrainte Matériau piézoélectrique Piézorésistivité Propriété mécanique Propriété thermique Ruthénium oxyde Résistance couche épaisse Sensibilité Stabilité
Keyword (en)
Bismuth oxides Chemical composition Multi-element compounds Planar configuration Experimental study Indium oxides Strain gages Piezoelectric materials Piezoresistivity Mechanical properties Thermal properties Ruthenium oxides Thick film resistor Sensitivity Stability
Keyword (es)
Piezoresistividad Propiedad térmica Resistor película espesa
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G10 Mechanical instruments, equipment and techniques / 001B00G10P Instruments for strain, force and torque

Pacs
0710P Instruments for strain, force, and torque

Discipline
Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2978726

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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