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Polarized optical studies of ordered InGaP2 under pressure

Author
CHANDRASEKHAR, H. R1 ; CHANDRASEKHAR, M1 ; THOMAS, R. J1 ; JONES, E. D; SCHNEIDER, R. P
[1] Univ. Missouri, Columbia MO 65211, United States
Source

Superlattices and microstructures. 1995, Vol 18, Num 2, pp 131-137 ; ref : 12 ref

CODEN
SUMIEK
ISSN
0749-6036
Scientific domain
Electronics; Condensed state physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Composé ternaire Couche épitaxique Croisement niveau Effet pression Effet électrooptique Etude expérimentale Gallium phosphure Hybridation Indium phosphure Largeur raie Matériau semiconducteur Modulation Photoluminescence Polarisation Pression hydrostatique Spectre réflexion Ga In P InGaP2 Composé minéral
Keyword (en)
Ternary compounds Epitaxial layers Level crossing Pressure effects Electro-optical effects Experimental study Gallium phosphides Hybridization Indium phosphides Line widths Semiconductor materials Modulation Photoluminescence Polarization Hydrostatic pressure Reflection spectrum Inorganic compounds
Keyword (es)
Espectro reflexión
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors

Pacs
7866F III-V semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2982506

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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