Analysis of ion beam induced damage and amorphization of 6H-SiC by Raman scattering
- Author
- PEREZ-RODRIGUEZ, A1 ; PACAUD, Y; CALVO-BARRIO, L1 ; SERRE, C1 ; SKORUPA, W; MORANTE, J. R1
[1] E.M.E., dept. Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 645-647, 08028-Barcelona, Spain - Conference title
- Part I: Epitaxy and bulk
- Conference name
- IPRM'95 : International Conference on Indium Phosphide and Related Materials (7 )
- Author (monograph)
- LORENZO, J (Editor)1 ; ASAHI, H (Editor); WADA, O (Editor); HASEGAWA, H (Editor)
[1] Rome Laboratory, Optoelectronic Components Research, 80 Scott Road, Hanscom AFB, MA 01731, United States - Source
Journal of electronic materials. 1996, Vol 25, Num 3, pp 541-547 ; ref : 36 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Amorphisation Composé binaire Dose rayonnement Défaut cristallin Dépendance température Effet physique rayonnement Etude expérimentale Faisceau ionique Germanium ion Implantation ion Recristallisation Silicium carbure Spectre Raman C Si SiC Composé minéral
- Keyword (en)
- Amorphization Binary compounds Radiation doses Crystal defects Temperature dependence Physical radiation effects Experimental study Ion beam Germanium ions Ion implantation Recrystallization Silicon carbides Raman spectra Inorganic compounds
- Keyword (es)
- Haz iónico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72W Doping and impurity implantation in other materials
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3007235
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02666633 
https://dx.doi.org/10.1007/BF02666633
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