LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP
- Author
- OH, D. K1 ; SUH, K. S1 ; CHOO, H1 ; KIM, H. M1 ; PYUN, K. E1 ; PARK, H.-M; NAHM, S
[1] Semiconductor Technology Division, Electronics and Telecommunications Research Institut, P. O. Box 106, Yusong, Taejon 3605-600, Korea, Republic of - Conference title
- Part I: Epitaxy and bulk
- Conference name
- IPRM'95 : International Conference on Indium Phosphide and Related Materials (7 )
- Author (monograph)
- LORENZO, J (Editor)1 ; ASAHI, H (Editor); WADA, O (Editor); HASEGAWA, H (Editor)
[1] Rome Laboratory, Optoelectronic Components Research, 80 Scott Road, Hanscom AFB, MA 01731, United States - Source
Journal of electronic materials. 1996, Vol 25, Num 3, pp 485-489 ; ref : 9 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Basse pression Composé binaire Couche mince Croissance cristalline en phase vapeur Etude expérimentale Gallium arséniure Indium arséniure Matériau semiconducteur Méthode MOCVD Superréseau As Ga As In GaAs InAs Substrat InP Composé minéral
- Keyword (en)
- Low pressure Binary compounds Thin films Crystal growth from vapors Experimental study Gallium arsenides Indium arsenides Semiconductor materials MOCVD Superlattices Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pacs
- 6865 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3007236
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02666624 
https://dx.doi.org/10.1007/BF02666624
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666624\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"485\";s:8:\"\u0000*\u0000epage\";s:3:\"489\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"OH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"SUH, K. S\";i:1;s:7:\"CHOO, H\";i:2;s:9:\"KIM, H. M\";i:3;s:10:\"PYUN, K. E\";i:4;s:10:\"PARK, H.-M\";i:5;s:7:\"NAHM, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666624\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"485\";s:8:\"\u0000*\u0000epage\";s:3:\"489\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"OH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"SUH, K. S\";i:1;s:7:\"CHOO, H\";i:2;s:9:\"KIM, H. M\";i:3;s:10:\"PYUN, K. E\";i:4;s:10:\"PARK, H.-M\";i:5;s:7:\"NAHM, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666624\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666624\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"485\";s:8:\"\u0000*\u0000epage\";s:3:\"489\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"OH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"SUH, K. S\";i:1;s:7:\"CHOO, H\";i:2;s:9:\"KIM, H. M\";i:3;s:10:\"PYUN, K. E\";i:4;s:10:\"PARK, H.-M\";i:5;s:7:\"NAHM, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666624\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"485\";s:8:\"\u0000*\u0000epage\";s:3:\"489\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"OH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"SUH, K. S\";i:1;s:7:\"CHOO, H\";i:2;s:9:\"KIM, H. M\";i:3;s:10:\"PYUN, K. E\";i:4;s:10:\"PARK, H.-M\";i:5;s:7:\"NAHM, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666624\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"485\";s:8:\"\u0000*\u0000epage\";s:3:\"489\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:2:\"OH\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"SUH, K. S\";i:1;s:7:\"CHOO, H\";i:2;s:9:\"KIM, H. M\";i:3;s:10:\"PYUN, K. E\";i:4;s:10:\"PARK, H.-M\";i:5;s:7:\"NAHM, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:63:\"LP-MOCVD grown (InAs)m(GaAs)m short period superlattices in InP\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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