AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability
- Author
- MIYA, S1 ; MURAMATSU, S1 ; KUZE, N1 ; NAGASE, K1 ; IWABUCHI, T1 ; ICHII, A1 ; OZAKI, M1 ; SHIBASAKI, I1
[1] Electronics Materials & Devices Laboratory, Asahi Chemical Ind. Co., LTD, 2-1, Samejima, Fuji, Shizuoka, 416, Japan - Conference title
- Part I: Epitaxy and bulk
- Conference name
- IPRM'95 : International Conference on Indium Phosphide and Related Materials (7 )
- Author (monograph)
- LORENZO, J (Editor)1 ; ASAHI, H (Editor); WADA, O (Editor); HASEGAWA, H (Editor)
[1] Rome Laboratory, Optoelectronic Components Research, 80 Scott Road, Hanscom AFB, MA 01731, United States - Source
Journal of electronic materials. 1996, Vol 25, Num 3, pp 415-420 ; ref : 13 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Antimoniure Antimoine Composé III-V Composé quaternaire Dispositif effet Hall Etude expérimentale Fiabilité Gallium Arséniure Processus fabrication Puits quantique Transistor effet champ Al As Ga Sb AlGaAsSb
- Keyword (en)
- Aluminium Antimonides Antimony III-V compound Quaternary compound Hall effect device Experimental study Reliability Gallium Arsenides Production process Quantum well Field effect transistor
- Keyword (es)
- Aluminio Antimoniuro Antimonio Compuesto III-V Compuesto cuaternario Dispositivo efecto Hall Estudio experimental Fiabilidad Galio Arseniuro Proceso fabricación Pozo cuántico Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3014263
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02666613 
https://dx.doi.org/10.1007/BF02666613
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