MOVPE growth of strained InGaAs/InAlAs MQWs for a polarization-insensitive electroabsorption modulator
- Author
- KONDO, S1 ; WAKITA, K1 ; NOGUCHI, Y1 ; YOSHIMOTO, N1 ; NAKAO, M1 ; NAKASHIMA, K1
[1] NTT Optoelectronics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-01, Japan - Conference title
- Part I: Epitaxy and bulk
- Conference name
- IPRM'95 : International Conference on Indium Phosphide and Related Materials (7 )
- Author (monograph)
- LORENZO, J (Editor)1 ; ASAHI, H (Editor); WADA, O (Editor); HASEGAWA, H (Editor)
[1] Rome Laboratory, Optoelectronic Components Research, 80 Scott Road, Hanscom AFB, MA 01731, United States - Source
Journal of electronic materials. 1996, Vol 25, Num 3, pp 385-388 ; ref : 10 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Caractéristique optique Composé III-V Composé ternaire Couche mince Croissance cristalline Etude expérimentale Gallium Arséniure Indium Arséniure Modulateur optique Modulateur électrooptique Multicouche Phase vapeur Processus fabrication Puits quantique contraint Puits quantique multiple 6865|PAC Al As In As Ga In InAlAs InGaAs Méthode MOVPE Composé minéral Composé organométallique
- Keyword (en)
- Aluminium Arsenides Optical characteristic III-V compound Ternary compound Thin film Crystal growth Experimental study Gallium Arsenides Indium Arsenides Optical modulator Electrooptical modulator Multiple layer Vapor phase Production process Strained quantum well Multiple quantum well MOVPE Inorganic compound Organometallic compound
- Keyword (es)
- Aluminio Arseniuro Característica óptica Compuesto III-V Compuesto ternario Capa fina Crecimiento cristalino Estudio experimental Galio Arseniuro Indio Arseniuro Modulador óptico Modulador electro-óptico Capa múltiple Fase vapor Proceso fabricación Pozo cuántico forzado Pozo cuántico múltiple Compuesto inorgánico Compuesto organometálico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3014541
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1007/BF02666607 
https://dx.doi.org/10.1007/BF02666607
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666607\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"385\";s:8:\"\u0000*\u0000epage\";s:3:\"388\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KONDO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:9:\"WAKITA, K\";i:1;s:10:\"NOGUCHI, Y\";i:2;s:12:\"YOSHIMOTO, N\";i:3;s:8:\"NAKAO, M\";i:4;s:12:\"NAKASHIMA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666607\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"385\";s:8:\"\u0000*\u0000epage\";s:3:\"388\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KONDO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:9:\"WAKITA, K\";i:1;s:10:\"NOGUCHI, Y\";i:2;s:12:\"YOSHIMOTO, N\";i:3;s:8:\"NAKAO, M\";i:4;s:12:\"NAKASHIMA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666607\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666607\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"385\";s:8:\"\u0000*\u0000epage\";s:3:\"388\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KONDO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:9:\"WAKITA, K\";i:1;s:10:\"NOGUCHI, Y\";i:2;s:12:\"YOSHIMOTO, N\";i:3;s:8:\"NAKAO, M\";i:4;s:12:\"NAKASHIMA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666607\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"385\";s:8:\"\u0000*\u0000epage\";s:3:\"388\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KONDO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:9:\"WAKITA, K\";i:1;s:10:\"NOGUCHI, Y\";i:2;s:12:\"YOSHIMOTO, N\";i:3;s:8:\"NAKAO, M\";i:4;s:12:\"NAKASHIMA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF02666607\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"385\";s:8:\"\u0000*\u0000epage\";s:3:\"388\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KONDO\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:9:\"WAKITA, K\";i:1;s:10:\"NOGUCHI, Y\";i:2;s:12:\"YOSHIMOTO, N\";i:3;s:8:\"NAKAO, M\";i:4;s:12:\"NAKASHIMA, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:24:\"Part I: Epitaxy and bulk\";s:8:\"\u0000*\u0000title\";s:102:\"MOVPE growth of strained InGaAs\/InAlAs MQWs for a polarization-insensitive electroabsorption modulator\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
