Low oxygen and carbon incorporation in AlGaAs using tritertiarybutylaluminum in organometallic vapor phase epitaxy
- Author
- WANG, C. A1 ; SALIM, S; JENSEN, K. F; JONES, A. C
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108, United States - Conference title
- Advances in indium phosphide, related materials and processing. Part II: Processing and characterization
- Conference name
- IPRM'95 : International Conference on Indium Phosphide and Related Materials (7 )
- Author (monograph)
- LORENZO, J (Editor)1 ; ASAHI, H (Editor); WADA, O (Editor); HASEGAWA, H (Editor)
[1] Rome Laboratory, Optoelectronic Components Research, 80 Scott Road, Hanscom AFB, MA 01731, United States - Source
Journal of electronic materials. 1996, Vol 25, Num 4, pp 771-774 ; ref : 19 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium arséniure Basse température Caractérisation Composé ternaire Concentration impureté Conductivité électrique Couche mince Croissance cristalline en phase vapeur Etude expérimentale Gallium arséniure Matériau semiconducteur Précurseur VPE Al As Ga Al0,25Ga0,75As Aluminium(tri-t-butyl) Méthode MOVPE Composé minéral Composé organométallique
- Keyword (en)
- Aluminium arsenides Low temperature Characterization Ternary compounds Impurity density Electric conductivity Thin films Crystal growth from vapors Experimental study Gallium arsenides Semiconductor materials Precursor VPE MOVPE Inorganic compounds Organometallic compounds
- Keyword (es)
- Baja temperatura Caracterización Concentración impureza
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3040432
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02666539 
https://dx.doi.org/10.1007/BF02666539
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