High ion density plasma etching of InGaP, AlInP, and AlGaP in CH4/H2/Ar
- Author
- LEE, J. W1 ; PEARTON, S. J1 ; SANTANA, C. J1 ; MILEHAM, J. R1 ; LAMBERS, E. S1 ; ABERNATHY, C. R1 ; REN, F; HOBSON, W. S
[1] University of Florida, Gainesville, Florida 32611, United States - Source
Journal of the Electrochemical Society. 1996, Vol 143, Num 3, pp 1093-1098 ; ref : 15 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium phosphure Cinétique Composé ternaire Etude expérimentale Gallium phosphure Gravure plasma Indium phosphure Matériau semiconducteur Mode opératoire Morphologie Résonance cyclotronique électronique Surface Traitement surface Al Ga P Al In P AlGaP AlInP Ga In P InGaP Composé minéral
- Keyword (en)
- Aluminium phosphides Kinetics Ternary compounds Experimental study Gallium phosphides Plasma etching Indium phosphides Semiconductor materials Operating mode Morphology Electron cyclotron-resonance Surfaces Surface treatments Inorganic compounds
- Keyword (es)
- Grabado plasma Método operatorio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3041960
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.1836589 
https://dx.doi.org/10.1149/1.1836589
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