Material and electrical characteristics of iron doped Pt-InAlAs Schottky diodes grown by LP-MOCVD
- Author
- KYUSHIK HONG1 ; PAVLIDIS, D1 ; SEJALON, F1
[1] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, United States - Conference title
- Advances in indium phosphide, related materials and processing. Part II: Processing and characterization
- Conference name
- IPRM'95 : International Conference on Indium Phosphide and Related Materials (7 )
- Author (monograph)
- LORENZO, J (Editor)1 ; ASAHI, H (Editor); WADA, O (Editor); HASEGAWA, H (Editor)
[1] Rome Laboratory, Optoelectronic Components Research, 80 Scott Road, Hanscom AFB, MA 01731, United States - Source
Journal of electronic materials. 1996, Vol 25, Num 4, pp 627-632 ; ref : 20 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Bruit basse fréquence Caractéristique électrique Composé III-V Composé organométallique Diode barrière Schottky Dopage Dépôt chimique phase vapeur Effet température Fabrication microélectronique Fer Indium Arséniure Niveau profond Piégeage porteur charge Spectre bruit Al As In Fe InAlAs
- Keyword (en)
- Aluminium Arsenides 1/f noise Electrical characteristic III-V compound Organometallic compound Schottky barrier diode Doping Chemical vapor deposition Temperature effect Microelectronic fabrication Iron Indium Arsenides Deep level Charge carrier trapping Noise spectrum
- Keyword (es)
- Aluminio Arseniuro Ruido baja frecuencia Característica eléctrica Compuesto III-V Compuesto organometálico Diodo barrera Schottky Doping Depósito químico fase vapor Efecto temperatura Fabricación microeléctrica Hierro Indio Arseniuro Nivel profundo Captura portador carga Espectro ruido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3044305
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02666514 
https://dx.doi.org/10.1007/BF02666514
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