Initial oxidation processes of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy
- Author
- IKEDA, H1 ; HOTTA, K1 ; FURUTA, S1 ; ZAIMA, S1 ; YASUDA, Y1
[1] Department of Crystalline Materials Science, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan - Conference title
- Solid state devices and materials
- Conference name
- SSDM'95. International Conference (Osaka 1995-08-21)
- Author (monograph)
- ARAKAWA, Yasuhiko (Editor)1 ; FUKUI, Takashi (Editor); TSUBOUCHI, Kazuo (Editor); YOKOYAMA, Naoki (Editor); FUKUMA, Masao (Editor); FURUYA, Kazuhito (Editor); ISHIWARA, Hiroshi (Editor); MATSUMOTO, Kazuhiko (Editor); MATSUMURA, Masakiyo (Editor); TABE, Michiharu (Editor); TANIGUCHI, Kenji (Editor); TARUCHA, Seigo (Editor)
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
[1] Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan - Source
Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1069-1072 ; 1 ; ref : 11 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Etude expérimentale Hydrogène Liaison chimique Mécanisme réaction Méthode haute résolution Oxydation Relaxation structurale Réaction surface Semiconducteur Silicium Spectrométrie perte énergie électron Terminaison surface Si Non métal
- Keyword (en)
- Experimental study Hydrogen Chemical bond Reaction mechanism High-resolution methods Oxidation Structure relaxation Surface reaction Semiconductor materials Silicon Electron energy loss spectroscopy Surface termination Non metal
- Keyword (es)
- Estudio experimental Hidrógeno Enlace químico Mecanismo reacción Oxidación Relajación estructural Reacción superficie Semiconductor(material) Silicio No metal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01I Surface physical chemistry / 001C01I04 Solid-gas interface
- Discipline
- General chemistry and physical chemistry Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3052652
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.35.1069 
https://dx.doi.org/10.1143/JJAP.35.1069
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