Influence of statistical spatial-nonuniformity of dopant atoms on threshold voltage in a system of many MOSFETs
- Author
- MIZUNO, T1
[1] ULSI Research Laboratories, Toshiba Corporation, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan - Conference title
- Solid state devices and materials
- Conference name
- SSDM'95. International Conference (Osaka 1995-08-21)
- Author (monograph)
- ARAKAWA, Yasuhiko (Editor)1 ; FUKUI, Takashi (Editor); TSUBOUCHI, Kazuo (Editor); YOKOYAMA, Naoki (Editor); FUKUMA, Masao (Editor); FURUYA, Kazuhito (Editor); ISHIWARA, Hiroshi (Editor); MATSUMOTO, Kazuhiko (Editor); MATSUMURA, Masakiyo (Editor); TABE, Michiharu (Editor); TANIGUCHI, Kenji (Editor); TARUCHA, Seigo (Editor)
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
[1] Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan - Source
Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 842-848 ; 1 ; ref : 6 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractéristique électrique Circuit VLSI Distribution non uniforme Dopage Répartition spatiale Seuil tension Statistique Transistor MOS Transistor effet champ
- Keyword (en)
- Electrical characteristic VLSI circuit Non uniform distribution Doping Spatial distribution Voltage threshold Statistics MOS transistor Field effect transistor
- Keyword (es)
- Característica eléctrica Circuito VLSI Distribución no uniforme Doping Distribución espacial Umbral tensión Estadística Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3055370
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.35.842 
https://dx.doi.org/10.1143/JJAP.35.842
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