GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
- Author
- KONDOW, M1 ; UOMI, K; NIWA, A; KITATANI, T; WATAHIKI, S; YAZAWA, Y
[1] RWCP Optoelectronics Hitachi Laboratory,, c/o Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan - Conference title
- Solid state devices and materials
- Conference name
- SSDM'95. International Conference (Osaka 1995-08-21)
- Author (monograph)
- ARAKAWA, Yasuhiko (Editor)1 ; FUKUI, Takashi (Editor); TSUBOUCHI, Kazuo (Editor); YOKOYAMA, Naoki (Editor); FUKUMA, Masao (Editor); FURUYA, Kazuhito (Editor); ISHIWARA, Hiroshi (Editor); MATSUMOTO, Kazuhiko (Editor); MATSUMURA, Masakiyo (Editor); TABE, Michiharu (Editor); TANIGUCHI, Kenji (Editor); TARUCHA, Seigo (Editor)
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
[1] Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan - Source
Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1273-1275 ; 1 ; ref : 6 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Arséniure Caractéristique spectrale Caractéristique thermique Caractéristique énergétique Contrainte compression Contrainte mécanique Contrainte traction Gallium Arséniure Gallium Nitruroarséniure Indium Nitruroarséniure Laser injection Nitrure Spectre optique
- Keyword (en)
- Arsenides Spectral data Thermal characteristic Energy characteristic Compressive stress Mechanical stress Tensile stress Gallium Arsenides Gallium Arsenides nitrides Indium Arsenides nitrides Injection laser Nitrides Optical spectrum
- Keyword (es)
- Arseniuro Característica espectral Característica térmica Característica energética Tensión compresión Tensión mecánica Tensión traccíon Galio Arseniuro Galio Arseniuro nitruro Indio Arseniuro nitruro Laser inyección Nitruro Espectro óptico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3063882
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1143/JJAP.35.1273 
https://dx.doi.org/10.1143/JJAP.35.1273
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.35.1273\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:2:\"2B\";s:8:\"\u0000*\u0000spage\";s:4:\"1273\";s:8:\"\u0000*\u0000epage\";s:4:\"1275\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KONDOW\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"UOMI, K\";i:1;s:7:\"NIWA, A\";i:2;s:11:\"KITATANI, T\";i:3;s:11:\"WATAHIKI, S\";i:4;s:9:\"YAZAWA, Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:33:\"Solid state devices and materials\";s:8:\"\u0000*\u0000title\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.35.1273\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:2:\"2B\";s:8:\"\u0000*\u0000spage\";s:4:\"1273\";s:8:\"\u0000*\u0000epage\";s:4:\"1275\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KONDOW\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"UOMI, K\";i:1;s:7:\"NIWA, A\";i:2;s:11:\"KITATANI, T\";i:3;s:11:\"WATAHIKI, S\";i:4;s:9:\"YAZAWA, Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:33:\"Solid state devices and materials\";s:8:\"\u0000*\u0000title\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.35.1273\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.35.1273\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:2:\"2B\";s:8:\"\u0000*\u0000spage\";s:4:\"1273\";s:8:\"\u0000*\u0000epage\";s:4:\"1275\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KONDOW\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"UOMI, K\";i:1;s:7:\"NIWA, A\";i:2;s:11:\"KITATANI, T\";i:3;s:11:\"WATAHIKI, S\";i:4;s:9:\"YAZAWA, Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:33:\"Solid state devices and materials\";s:8:\"\u0000*\u0000title\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:20:\"10.1143\/JJAP.35.1273\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:2:\"35\";s:8:\"\u0000*\u0000issue\";s:2:\"2B\";s:8:\"\u0000*\u0000spage\";s:4:\"1273\";s:8:\"\u0000*\u0000epage\";s:4:\"1275\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KONDOW\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"UOMI, K\";i:1;s:7:\"NIWA, A\";i:2;s:11:\"KITATANI, T\";i:3;s:11:\"WATAHIKI, S\";i:4;s:9:\"YAZAWA, Y\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:33:\"Solid state devices and materials\";s:8:\"\u0000*\u0000title\";s:109:\"GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
