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Preparation of MgO films on GaAs by metalorganic chemical vapor deposition

Author
BOO, J.-H1 ; YU, K.-S1 ; KOH, W1 ; KIM, Y1
[1] Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Yusong, P.O. Box 107, Taejon 305-600, Korea, Republic of
Source

Materials letters (General ed.). 1996, Vol 26, Num 4-5, pp 233-236 ; ref : 19 ref

CODEN
MLETDJ
ISSN
0167-577X
Scientific domain
Crystallography; Chemical industry parachemical industry; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Basse pression Composé binaire Croissance cristalline en phase vapeur Etude expérimentale Magnésium oxyde Méthode MOCVD Précurseur Mg O MgO Substrat GaAs Composé minéral
Keyword (en)
Low pressure Binary compounds Crystal growth from vapors Experimental study Magnesium oxides MOCVD Precursor Inorganic compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3064988

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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