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Molecular beam epitaxy of high quality Hg1-xCdxTe films with control of the composition distribution

Author
VARAVIN, V. S1 ; DVORETSKY, S. A1 ; LIBERMAN, V. I1 ; MIKHAILOV, N. N1 ; SIDOROV, YU. G1
[1] Institute of Semiconductor Physics, Novosibirsk, Russian Federation
Conference title
II-VI Compounds 1995
Conference name
International Conference on II-VI Compounds and Devices (7 ; Edinburgh 1995-08-13)
Author (monograph)
CAVENETT, B. C (Editor)1 ; DAVIES, John J (Editor); GALBRAITH, Ian (Editor)1 ; PRIOR, Kevin A (Editor)1
[1] Heriot-Watt University, United Kingdom
Source

Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 1161-1166 ; ref : 13 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
Russian
Keyword (fr)
Cadmium tellurure Commande processus Composition chimique Composé ternaire Couche épaisse Couche épitaxique Croissance cristalline Distribution concentration Défaut cristallin Ellipsométrie Epitaxie jet moléculaire Etude expérimentale Hétérojonction In situ Matériau semiconducteur Mercure tellurure Photoconducteur Photodiode Semiconducteur II-VI Solution solide Composé minéral
Keyword (en)
Cadmium tellurides Process control Chemical composition Ternary compounds Thick film Epitaxial layers Crystal growth Concentration distribution Crystal defects Ellipsometry Molecular beam epitaxy Experimental study Heterojunctions In situ Semiconductor materials Mercury tellurides Photoconductors Photodiodes II-VI semiconductors Solid solutions Inorganic compounds
Keyword (es)
Capa espesa Distribución concentración In situ
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Pacs
6865 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Pacs
8115H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3067784

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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