Recent advances in island and multilayer growth of metals on metals far from equilibrium
- Author
- VIDALI, G1 ; ZENG, H1
[1] The Solid State Science and Technology Program, Department of Physics, Syracuse University, Syracuse, NY 13244-1130, United States - Conference title
- International Conference on Solid Films and Surfaces, ICSFS-7
- Conference name
- International Conference on Solid Films and Surfaces, ICSFS-7 (7 ; Hsinchu 1994-12-12)
- Author (monograph)
- HWANG, H. L (Editor)1 ; TSONG, T. T (Editor)
[1] National Tsing Hua University, Taiwan, Taiwan, Province of China - Source
Applied surface science. 1996, Vol 92, Num 1-4, pp 11-19 ; ref : 34 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Article synthèse Croissance cristalline Croissance film Epitaxie jet moléculaire Hétéroépitaxie Interface solide solide Rugosité Structure îlot Pb Substrat Cu
- Keyword (en)
- Reviews Crystal growth Film growth Molecular beam epitaxy Heteroepitaxy Solid-solid interfaces Roughness Island structure
- Keyword (es)
- Heteroepitaxia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3071812
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0169-4332(95)00195-6 
https://dx.doi.org/10.1016/0169-4332(95)00195-6
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