Influence of oxygen on the recombination strength of dislocations in silicon wafers
- Author
- SIMON, J. J1 ; PERICHAUD, I1
[1] Lab. de Photoélectricité des Semi-conducteurs, EA 882 (DSO), Faculté des Sciences et Techniques, 13397 Marseille, France - Conference title
- European Materials Research Society 1995 Spring Meeting, Symposium N: Carbon, Hydrogen, and Oxygen in Silicon and in Other Elemental Semiconductors
- Conference name
- European Materials Research Society 1995 Spring Meeting, Symposium N: Carbon, Hydrogen, and Oxygen in Silicon and in Other Elemental Semiconductors (Strasbourg 1995-05-22)
- Author (monograph)
- BORGHESI, Alessandro (Editor)1 ; GÖSELE, Ulrich M (Editor); VANHELLEMONT, Jan (Editor)
European Materials Research Society, Europe (Funder/Sponsor)
Council of Europe, Strasbourg, France (Funder/Sponsor)
Commission of European Communities, Luxembourg, Luxembourg (Funder/Sponsor)
[1] Dipartimento di Fisica, Università degli Studi di Modena, Via Campi 213a, 41100 Modena, Italy - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 183-186 ; ref : 16 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- DLTS Diffusion(transport) Dislocation Déformation plastique Méthode Czochralski Phénomène transitoire Silicium
- Keyword (en)
- DLTS Diffusion Dislocations Plastic deformation Czochralski method Transients Silicon
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Y Interaction between different crystal defects; gettering effect
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3076166
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-5107(95)01299-0 
https://dx.doi.org/10.1016/0921-5107(95)01299-0
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