Preparation of layered ferroelectric Bi2SrTa2O9 single-crystal platelets
- Author
- SUZUKI, M1 ; NAGASAWA, N1 ; MACHIDA, A1 ; AMI, T1
[1] SONY Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan - Source
Japanese journal of applied physics. 1996, Vol 35, Num 5A, pp L564-L567 ; 2 ; ref : 36 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Attaque chimique Composé quaternaire Cristal lamellaire Croissance cristalline en phase fondue Etude expérimentale Matériau ferroélectrique Microscopie force atomique Monocristal Méthode fondant XRD Bi O Sr Ta Bi2SrTa2O9 Composé minéral Métal transition composé
- Keyword (en)
- Chemical etching Quaternary compounds Layered crystals Crystal growth from melts Experimental study Ferroelectric materials Atomic force microscopy Monocrystals Flux growth XRD Inorganic compounds Transition element compounds
- Keyword (es)
- Ataque químico Método fundente
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15F Laser deposition
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3090531
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.35.L564 
https://dx.doi.org/10.1143/JJAP.35.L564
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