Planar anisotropy in amorphous semiconductors
- Author
- KHAN, W. I1 ; RAKHSHANI, A. E1 ; AL-QENAIE, A. Y. M1
[1] Department of Physics, Kuwait University, P.O. Box 5969, 13060 Safat, Kuwait - Source
Physica. B, Condensed matter. 1996, Vol 222, Num 1-3, pp 167-172 ; ref : 15 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Anisotropie Champ interne Commutation Effet champ électrique Etude théorique Polarisation spontanée Polarisation Propriété diélectrique Saturation Semiconducteur amorphe Valeur critique
- Keyword (en)
- Anisotropy Internal field Switching Electric field effects Theoretical study Spontaneous polarization Polarization Dielectric properties Saturation Amorphous semiconductors Critical value
- Keyword (es)
- Campo interno Polarización espontánea Valor crítico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G22 Dielectric properties of solids and liquids / 001B70G22E Polarization and depolarization
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3093927
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-4526(96)00019-1 
https://dx.doi.org/10.1016/0921-4526(96)00019-1
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