Relationship between deep levels in vanadium-doped CdTe and photorefractive effect
- Author
- ZERRAI, A1 ; MARRAKCHI, G1 ; MARFAING, Y3 ; TRIBOULET, R3 ; KOEBEL, J. M4 ; HADJ-ALI, M4 ; SIFFERT, P4 ; BREMOND, G1 ; MOISAN, J. Y2 ; MARTEL, G2 ; GAUNEAU, M2 ; LAMBERT, B2 ; GRAVEY, P2 ; WOLFFER, N2 ; AOUDIA, A3
[1] Laboratoire de Physique de la Matière, URA, CNRS 358, INSA, 69621 Villeurbanne, France
[2] France Telecom CNET/LAB/RIO/PCO, BP 40, 22307 Lannion, France
[3] CNRS Bellevue, 1 place A. Briand, 92195 Meudon, France
[4] UPR CNRS 292, 23 rue du Loess, 67037 Strasbourg, France - Conference title
- Purification, doping and defects in II-VI materials
- Conference name
- Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference (Strasbourg 1995-05-22)
- Author (monograph)
- TRIBOULET, R (Editor)1 ; RUDOLPH, P (Editor); MüLLER-VOGT, G (Editor)
Council of Europe, Strasbourg, France (Funder/Sponsor)
Commission of European Communities, Luxembourg, Luxembourg (Funder/Sponsor)
European Materials Research Society, Europe (Funder/Sponsor)
[1] CNRS, Laboratoire de Physique des Solides de Bellevue, France - Source
Journal of crystal growth. 1996, Vol 161, Num 1-4, pp 264-270 ; ref : 8 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition vanadium Cadmium tellurure Composé binaire Composé ternaire Effet photoréfractif Effet électrooptique Etat défaut Etude expérimentale Matériau dopé Niveau énergie profond Piège Zinc tellurure Cd Te Zn Cd Te CdTe:V CdZnTe:V Composé minéral Métal transition composé
- Keyword (en)
- Vanadium additions Cadmium tellurides Binary compounds Ternary compounds Photorefractive effect Electro-optical effects Defect states Experimental study Doped materials Deep energy levels Traps Zinc tellurides Inorganic compounds Transition element compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55G Ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3094304
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)00668-0 
https://dx.doi.org/10.1016/0022-0248(95)00668-0
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