Precise mask alignment to the crystallographic orientation of silicon wafers using wet anisotropic etching
- Author
- VANGBO, M1 ; BÄCKLUND, Y1
[1] Uppsala University, Department of Technology, Box 534, 751 21 Uppsala, Sweden - Source
Journal of micromechanics and microengineering (Print). 1996, Vol 6, Num 2, pp 279-284 ; ref : 9 ref
- ISSN
- 0960-1317
- Scientific domain
- Electronics; Mechanical engineering
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alignement Attaque chimique Etude comparative Fabrication microélectronique Masque Orientation cristalline Pastille électronique Procédé voie humide Réactif attaque
- Keyword (en)
- Alignment Chemical etching Comparative study Microelectronic fabrication Mask Crystal orientation Wafer Wet process Etching reagent
- Keyword (es)
- Alineamiento Ataque químico Estudio comparativo Fabricación microeléctrica Máscara Orientación cristalina Pastilla electrónica Procedimiento vía húmeda Reactivo ataque
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3109666
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0960-1317/6/2/011 
https://dx.doi.org/10.1088/0960-1317/6/2/011
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