Polarization-dependent angular reflectance of silicon and germanium in the infrared
- Author
- ZHANG, Z. M1 ; HANSSEN, L. M1 ; DATLA, R. U1
[1] Radiometric Physics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States - Source
Infrared physics & technology. 1996, Vol 37, Num 4, pp 539-546 ; ref : 26 ref
- ISSN
- 1350-4495
- Scientific domain
- Optics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Etude expérimentale Germanium Incidence oblique Polarisation Réflexion spéculaire Silicium Spectre IR Spectre réflexion Variation angulaire Ge Si
- Keyword (en)
- Experimental study Germanium Oblique incidence Polarization Specular reflection Silicon Infrared spectra Reflection spectrum Angular variation
- Keyword (es)
- Incidencia oblicua Reflexión especular Espectro reflexión Variación angular
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H30 Infrared and raman spectra and scattering / 001B70H30A Elemental semiconductors and insulators
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3127051
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S1350-4495(95)00118-2 
https://dx.doi.org/10.1016/S1350-4495(95)00118-2
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