A triple-node intrinsic stacking fault/nanotwin/extrinsic stacking fault in a small GaAs island grown on a Si (001) substrate
- Author
- LOUBRADOU, M1 ; BONNET, R1 ; VILA, A
[1] Institut National Polytechnique de Grenoble, Laboratoire de Thermodynamique et Physico-chimie Métallurgiques (Unité de Recherche associée au CNRS 29), Ecole Nationale Supérieure d'Electrochimie et d'Electrométallurgie de Grenoble, Domaine U, 38402 Saint Martin-d'Hères, France - Source
Philosophical magazine letters. 1996, Vol 74, Num 1, pp 1-8 ; ref : 29 ref
- CODEN
- PMLEEG
- ISSN
- 0950-0839
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Taylor & Francis, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Couche épitaxique Dislocation Défaut cristallin Défaut empilement Echelle nanométrique Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Hétéroépitaxie Macle Matériau semiconducteur Méthode haute résolution Structure îlot TEM As Ga GaAs Substrat Si Composé minéral
- Keyword (en)
- Binary compounds Epitaxial layers Dislocations Crystal defects Stacking faults Nanometer scale Molecular beam epitaxy Experimental study Gallium arsenides Heteroepitaxy Crystal twin Semiconductor materials High-resolution methods Island structure TEM Inorganic compounds
- Keyword (es)
- Heteroepitaxia Macla
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3132102
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1080/095008396180498 
https://dx.doi.org/10.1080/095008396180498
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