Initial growth stages of AlxGa1-xP on epitaxial silicon
- Author
- SANTANA, C. J1 ; ABERNATHY, C. R1 ; PEARTON, S. J1 ; JONES, K. S1
[1] Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States - Conference title
- International Conference on Chemical Beam Epitaxy and Related Growth Techniques
- Conference name
- International Conference on Chemical Beam Epitaxy and Related Growth Techniques (5 ; Lajolla 1995-08-14)
- Author (monograph)
- ABERNATHY, C. R (Editor)1 ; TU, C. W (Editor)
[1] University of Florida, Gainesville, FL, United States - Source
Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 248-255 ; ref : 18 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium phosphure Composition chimique Composé organométallique Composé ternaire Couche mince Couche épitaxique Croissance cristalline Epitaxie jet moléculaire Etude expérimentale Gallium phosphure Germination cristalline Hétéroépitaxie Matériau semiconducteur Microscopie force atomique Mécanisme croissance Méthode haute résolution Solution solide TEM Al Ga P AlxGa1-xP Méthode MOMBE Substrat Si Composé minéral
- Keyword (en)
- Aluminium phosphides Chemical composition Organometallic compounds Ternary compounds Thin films Epitaxial layers Crystal growth Molecular beam epitaxy Experimental study Gallium phosphides Crystal nucleation Heteroepitaxy Semiconductor materials Atomic force microscopy Growth mechanism High-resolution methods Solid solutions TEM MOMBE Inorganic compounds
- Keyword (es)
- Germinación cristalina Heteroepitaxia Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3140402
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)01058-0 
https://dx.doi.org/10.1016/0022-0248(95)01058-0
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