InP:Fe semi-insulating layers by chemical beam epitaxy
- Author
- RIGO, C1 ; MADELLA, M1 ; PAPUZZA, C1 ; CACCIATORE, C1 ; STANO, A; GASPAROTTO, A; SALVIATI, G; NASI, L
[1] CSLET-Centro Studi e Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148 Torino, Italy - Conference title
- International Conference on Chemical Beam Epitaxy and Related Growth Techniques
- Conference name
- International Conference on Chemical Beam Epitaxy and Related Growth Techniques (5 ; Lajolla 1995-08-14)
- Author (monograph)
- ABERNATHY, C. R (Editor)1 ; TU, C. W (Editor)
[1] University of Florida, Gainesville, FL, United States - Source
Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 430-433 ; ref : 15 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition fer Caractérisation Caractéristique courant tension Composé binaire Couche mince Croissance cristalline en phase vapeur Dopage cristal Epitaxie jet chimique Etude expérimentale Indium phosphure Matériau semiconducteur Profil dopage Précipité In P InP:Fe
- Keyword (en)
- Iron additions Characterization IV characteristic Binary compounds Thin films Crystal growth from vapors Crystal doping CBE Experimental study Indium phosphides Semiconductor materials Doping profiles Precipitates
- Keyword (es)
- Caracterización
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3141335
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(96)00018-8 
https://dx.doi.org/10.1016/0022-0248(96)00018-8
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