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Preparation of TiN film on bras by CAPD as a decoration system

Author
WANG, S.-G1 ; BAI, X.-D1 ; WANG, B.-C1 ; FAN, Y.-D1
[1] Department of Material Science and Engineering, Tsinghua University, Beijing 100084, China
Source

Thin solid films. 1996, Vol 278, Num 1-2, pp 67-73 ; ref : 20 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Analyse image Couche mince Dépôt plasma Epaisseur Etude expérimentale Métallographie Méthode électrochimique Pression partielle Procédé dépôt Propriété optique Revêtement décoratif Réflectivité Résistance corrosion SEM Spectrométrie Auger TEM Titane nitrure Traitement surface
Keyword (en)
Image analysis Thin films Plasma deposition Thickness Experimental study Metallography Electrochemical method Partial pressure Deposition process Optical properties Decorative coatings Reflectivity Corrosion resistance SEM AES TEM Titanium nitrides Surface treatments
Keyword (es)
Depósito plasma Método electroquímico Procedimiento revestimiento Revestimiento decorativo Reflectividad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic / 001B60H60W Other nonelectronic physical properties

Pacs
6860W Other nonelectronic physical properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3142531

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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