Preparation of spinel ZnGa2O4 films on MgO substrates by the solvent evaporation epitaxy method
- Author
- YAN, Z1 ; KOIKE, M1 ; TAKEI, H1
[1] Institute for Solid State Physics, The University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan - Source
Journal of crystal growth. 1996, Vol 165, Num 1-2, pp 183-186 ; ref : 4 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractérisation Composé ternaire Couche mince Croissance cristalline en solution Epitaxie Etude expérimentale Gallium oxyde Non stoechiométrie Orientation cristalline Orientation préférentielle Spinelles Structure cristalline Zinc oxyde Ga O Zn ZnGa2O4 Composé minéral Métal transition composé
- Keyword (en)
- Characterization Ternary compounds Thin films Crystal growth from solutions Epitaxy Experimental study Gallium oxides Nonstoichiometry Crystal orientation Preferred orientation Spinels Crystal structure Zinc oxides Inorganic compounds Transition element compounds
- Keyword (es)
- Caracterización Orientación preferencial
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Pacs
- 8115L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3143959
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(96)00183-2 
https://dx.doi.org/10.1016/0022-0248(96)00183-2
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