Real time observations of surface reactions during a-Si:H deposition or H2 plasma annealing by using FT-IR-ATR
- Author
- MIYOSHI, YH1 ; YOSHIDA, Y1 ; MIYAZAKI, S1 ; HIROSE, M1
[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Hiroshima, Japan - Conference title
- Amorphous semiconductors - Science and technology
- Conference name
- ICAS 16: International Conference on Amorphous Semiconductors - Science and Technology (16 ; Kobe 1995-09-04)
- Author (monograph)
- SHIMIZU, Tatsuo (Editor)1 ; YONEZAWA, Fumiko (Editor); NITTA, Shoji (Editor); SHIMIZU, Isamu (Editor)
International Union of Pure and Applied Physics IUPAP, Göteborg, Sweden (Funder/Sponsor)
Japan Society of Applied Physics JSAP, Japan (Funder/Sponsor)
Commemorative Association for the Japan World Exposition (1970), Japan (Funder/Sponsor)
Kobe City, Kobe, Japan (Funder/Sponsor)
New Energy and Industry Technology Development Organization NEDO, International (Funder/Sponsor)
Ministry of International Trade and Industry ; AIST ; New Sunshine Project Organization, Tokyo, Japan (Funder/Sponsor)
Kansai Research Foundation for Technology Promotion, Japan (Funder/Sponsor)
Murata Science Foundation, Japan (Funder/Sponsor)
[1] Department of Electrical and Computer Engineering, Kanazawa University, Kanazawa, Japan - Source
Journal of non-crystalline solids. 1996, Vol 198200, pp 1029-1033 ; 2 ; ref : 15 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition hydrogène Couche mince Désorption Etude expérimentale Méthode PECVD Plasma Préparation chimique Réaction surface Réflexion totale atténuée Semiconducteur amorphe Silicium Spectre IR Spectrométrie transformée Fourier Système temps réel Terminaison surface Traitement thermique Matériau amorphe hydrogéné a-Si:H Non métal
- Keyword (en)
- Hydrogen additions Thin films Desorption Experimental study PECVD Plasma Chemical preparation Surface reactions Total attenuated reflection Amorphous semiconductors Silicon Infrared spectra Fourier transform spectroscopy Real time systems Surface termination Heat treatments Hydrogenated amorphous material Nonmetals
- Keyword (es)
- Reflexión total atenuada
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01I Surface physical chemistry / 001C01I04 Solid-gas interface
- Discipline
- General chemistry and physical chemistry Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3144472
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-3093(96)00032-4 
https://dx.doi.org/10.1016/0022-3093(96)00032-4
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