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Point defects in M2-xInxTe3 (M = Sb or Bi) crystals

Author
HORAK, J1 ; KARAMAZOV, S; LOSTAK, P
[1] Acad. sci. Czech Republic, inst. inorganic chemistry, 160 00 Prague, Czech Republic
Source

Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1995, Vol 72, Num 6, pp 627-636 ; ref : 22 ref

ISSN
1364-2812
Scientific domain
Condensed state physics
Publisher
Taylor & Francis, London
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Antimoine tellurure Bismuth tellurure Composition chimique Composé ternaire Concentration porteur charge Défaut ponctuel Etude expérimentale Indium tellurure Lacune Matériau semiconducteur Solution solide Bi In Te Bi2-xInxTe3 In Sb Te Sb2-xInxTe3 Composé minéral
Keyword (en)
Antimony tellurides Bismuth tellurides Chemical composition Ternary compounds Charge carrier concentration Point defects Experimental study Indium tellurides Vacancies Semiconductor materials Solid solutions Inorganic compounds
Keyword (es)
Concentración portador carga
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters

Pacs
6172J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3147904

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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