Knock-on subplantation-induced formation of nanocrystalline c-BN with r.f. magnetron sputtering and r.f. argon ion plating
- Author
- ULRICH, S1 ; SCHWAN, J1 ; DONNER, W; EHRHARDT, H1
[1] Technische Physik, Universität Kaiserslautern, Erwin Schrödinger Strasse, 67663 Kaiserslautern, Germany - Conference title
- Diamond Films '95: European Conference on Diamond, Diamond-like and Related Materials
- Conference name
- Diamond Films '95: European Conference on Diamond, Diamond-like and Related Materials (6 ; Barcelona 1995-09-10)
- Author (monograph)
- BACHMANN, Peter K (Editor)1 ; BUCKLEY-GOLDER, Ian M (Editor); GLASS, Jeffrey T (Editor); KAMO, Matzukazu (Editor)
[1] Philips Research Laboratories, Germany - Source
Diamond and related materials. 1996, Vol 5, Num 3-5, pp 548-551 ; ref : 26 ref
- ISSN
- 0925-9635
- Scientific domain
- Crystallography
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bore nitrure Caractérisation Composé binaire Composé minéral Couche mince Couche subsuperficielle Croissance cristalline en phase vapeur Effet physique rayonnement Etude expérimentale Implantation ion Magnétron Nanocristal Placage ionique Pulvérisation haute fréquence B N BN Subimplantation
- Keyword (en)
- Boron nitrides Characterization Binary compounds Inorganic compounds Thin films Subsurface layer Crystal growth from vapors Physical radiation effects Experimental study Ion implantation Magnetrons Nanocrystal Ion plating Radiofrequency sputtering Subplantation
- Keyword (es)
- Caracterización Capa subsuperficial Nanocristal Pulverización alta frecuencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3151457
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0925-9635(96)80077-X 
https://dx.doi.org/10.1016/0925-9635(96)80077-X
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