An atomic force microscopy study on the roughness of silicon wafers correlated with direct wafer bonding
- Auteur
- ROBERDS, B. E1 ; FARRENS, S. N1
[1] Department of Chemical Engineering and Materials Science, Engineering Unit II, University of California, Davis, California 95616, United States - Source
Journal of the Electrochemical Society. 1996, Vol 143, Num 7, pp 2365-2371 ; ref : 10 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Domaine scientifique
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Editeur
- Electrochemical Society, Pennington, NJ
- Pays de publication
- United States
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- Analyse surface Caractéristique spectrale Dimension fractale Fabrication microélectronique Microscopie force atomique Pastille électronique Processus fabrication Rugosité Silicium Spectre puissance Topographie Fixabilité Fixation pastille Image IR
- Mot clé (en)
- Surface analysis Spectral data Fractal dimension Microelectronic fabrication Atomic force microscopy Wafer Production process Roughness Silicon Power spectrum Topography Wafer bonding
- Mot clé (es)
- Análisis superficie Característica espectral Dimensión fractal Fabricación microeléctrica Microscopía fuerza atómica Pastilla electrónica Proceso fabricación Rugosidad Silicio Espectro potencia Topografía
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001D Sciences appliquees / 001D03 Electronique / 001D03F Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide / 001D03F17 Fabrication microélectronique (technologie des matériaux et des surfaces)
- Discipline
- Electronics
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- 3161733
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.1837009 
https://dx.doi.org/10.1149/1.1837009
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