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Precisions on reaction monitoring from in-situ resistance measurements : relations between such measurements and actual reaction kinetics

Author
ZHANG, S.-L1 ; D'HEURLE, F. M1
[1] Fasta tillståndets elektronik, KTH, Electrum 229, 164 40 Kista, Sweden
Source

Thin solid films. 1996, Vol 279, Num 1-2, pp 248-252 ; ref : 7 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Couche mince Etude théorique Mesure électrique Modélisation Mécanisme croissance Résistivité électrique Siliciure Transition phase Vitesse réaction
Keyword (en)
Thin films Theoretical study Electrical measurement Modeling Growth mechanism Electric resistivity Silicides Phase transitions Reaction rates
Keyword (es)
Medida eléctrica Modelización Mecanismo crecimiento Resistividad eléctrica Transición fase
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy

Pacs
8115 Methods of deposition of films and coatings; film growth and epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3174571

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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