Real-time analysis of III-V-semiconductor epitaxial growth
- Author
- RICHTER, W1 ; ZETTLER, J.-T1
[1] Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany - Conference title
- IVC-13/ICSS-9: Proceedings of the 13th International Vacuum Congress and the 9th International Conference on Solid Surfaces, Yokohama, Japan, 25-29 September 1995
- Conference name
- IVC-13/ICSS-9 (Yokohama 1995-09-25) = International Conference on Solid Surfaces (9 ; Yokohama 1995-09-25) = International Vacuum Congress (13 ; Yokohama 1995-09-25)
- Author (monograph)
- SHIMIZU, R (Editor)1 ; OECHSNER, H (Editor); MCGUIRE, G (Editor); YASUDA, Y (Editor)2
Vacuum Society of Japan, Japan (Funder/Sponsor)
Japan Vacuum Industry Association, Japan (Funder/Sponsor)
International Union of Vacuum Science Technique and Application IUVSTA, International (Funder/Sponsor)
[1] Department of Applied Physics, Osaka University, Suita 565, Osaka, Japan
[2] Department of Crystalline Materials Science, School of Engineering, Nagoya University, Fuo-cho, Chikusa-ku, Nagoya 464-01, Japan - Source
Applied surface science. 1996, Vol 100-01, pp 465-477 ; ref : 42 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé organométallique Ellipsométrie spectroscopique Epitaxie jet moléculaire Mécanisme croissance Semiconducteur III-V Spectre réflexion Structure surface Méthode MOVPE
- Keyword (en)
- Organometallic compounds Spectroscopic ellipsometry Molecular beam epitaxy Growth mechanism III-V semiconductors Reflection spectrum Surface structure MOVPE
- Keyword (es)
- Elipsometría espectroscópica Mecanismo crecimiento Espectro reflexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3200266
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0169-4332(96)00321-2 
https://dx.doi.org/10.1016/0169-4332(96)00321-2
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