Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100)
- Author
- HSUEH, G. C1 2 ; REAVES, C. M3 ; DENBAARS, S. P3 ; WEINBERG, W. H2
[1] Center for Quantized Electonic Structures, University of California, Santa Barbara, CA 93106, United States
[2] Department of Chemical Engineering, University of California 93106, Santa Barbara, CA 93106, United States
[3] Materials Department, University of California, Santa Barbara, CA 93106, United States - Source
Surface science. 1996, Vol 366, Num 1, pp 129-139 ; ref : 32 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Etude expérimentale Indium phosphure Matériau semiconducteur Microscopie force atomique Mécanisme croissance Méthode MOCVD Structure îlot In P InP
- Keyword (en)
- Inorganic compounds Experimental study Indium phosphides Semiconductor materials Atomic force microscopy Growth mechanism MOCVD Island structure
- Keyword (es)
- Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3212646
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0039-6028(96)00806-0 
https://dx.doi.org/10.1016/0039-6028(96)00806-0
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