A theoretical investigation of migration potentials of Ga adatoms near kink and step edges on GaAs(001)-(2 × 4) surface
- Author
- ITO, T1 ; SHIRAISHI, K2
[1] NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
[2] NTT Basic Research Laboratories, 3-1 Morinosato Wakamiga, Atsugi-shi, Kanagawa 243-01, Japan - Source
Japanese journal of applied physics. 1996, Vol 35, Num 8A, pp L949-L952 ; 2 ; ref : 26 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Adatome Composé binaire Etude théorique Gallium arséniure Gallium Gradin Kink Matériau semiconducteur Migration Potentiel interatomique Reconstruction surface Site adsorption Structure adsorption Surface As Ga Ga GaAs Composé minéral Métal
- Keyword (en)
- Adatoms Binary compounds Theoretical study Gallium arsenides Gallium Step Kinks Semiconductor materials Migration Interatomic potential Surface reconstruction Adsorption site Adsorption structure Surfaces Inorganic compounds Metals
- Keyword (es)
- Peldaño Potencial interatómico Sitio adsorción Estructura adsorción
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3212989
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.35.L949 
https://dx.doi.org/10.1143/JJAP.35.L949
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