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Preparation of CuInSe2 thin films by the pulse-plated electrodeposition

Author
ENDO, S1 ; NAGAHORI, Y1 ; NOMURA, S1
[1] Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162, Japan
Source

Japanese journal of applied physics. 1996, Vol 35, Num 9A, pp L1101-L1103 ; 2 ; ref : 14 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Caractérisation Composé ternaire Couche mince Croissance cristalline en solution Cuivre séléniure Electrodépôt Etude expérimentale Indium séléniure Matériau semiconducteur Polycristal Recuit thermique Solution aqueuse Cu In Se CuInSe2 Composé minéral Métal transition composé
Keyword (en)
Characterization Ternary compounds Thin films Crystal growth from solutions Copper selenides Electrodeposition Experimental study Indium selenides Semiconductor materials Polycrystals Thermal annealing Aqueous solutions Inorganic compounds Transition element compounds
Keyword (es)
Caracterización Recocido térmico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Pacs
8115L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3213239

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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