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Potential-induced changes in the surface morphology of (100) n-InP samples photoelectrochemically etched

Author
SOLTZ, D1 ; CESCATO, L1
[1] Laboratório de Óptica, Instituto de Física, Universidade Estadual de Campinas, 13083-970 Campinas-SP, Brazil
Source

Journal of the Electrochemical Society. 1996, Vol 143, Num 9, pp 2815-2821 ; ref : 36 ref

CODEN
JESOAN
ISSN
0013-4651
Scientific domain
General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
Publisher
Electrochemical Society, Pennington, NJ
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Chlorhydrique acide Electrode Etude expérimentale Gravure photoélectrochimique Indium Phosphure Microscopie électronique balayage Morphologie Orientation cristalline Potentiel électrode Réaction électrochimique Semiconducteur type n Solution acide Structure surface
Keyword (en)
Hydrochloric acid Electrodes Experimental study Photoelectrochemical etching Indium Phosphides Scanning electron microscopy Morphology Crystal orientation Electrode potential Electrochemical reaction N type semiconductor Acidic solution Surface structure
Keyword (es)
Ácido chlorhídrico Electrodo Estudio experimental Grabado fotoelectroquímico Indio Fosfuro Microscopía electrónica barrido Morfología Orientación cristalina Potencial electrodo Reacción electroquímica Semiconductor tipo n Solución ácida Estructura superficie
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry / 001C01H02 Electrodes: preparations and properties / 001C01H02B Other electrodes

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3219187

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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